Job description
About GF
GlobalFoundries® Inc. (GF®) is one of the world's leading semiconductor manufacturers. GF redefines innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions with leading performance in all growth markets. GF offers a unique mix of design, development and manufacturing services. With a talented and diverse team and manufacturing locations in the U.S., Europe and Asia, GF is a trusted technology provider to its global customers. GF employs approximately 13,000 people, including more than 3,000 in Dresden, Germany.
For more information, visit www.gf.com.
Introduction
GlobalFoundries is a leading full‑service semiconductor manufacturer with advanced fabrication sites across the globe. Our Dresden site (F1) develops and manufactures differentiated CMOS technologies, including 22FDX® – a key enabler for ultra‑low‑power electronics, embedded NVM, and emerging quantum applications. The Technology Architect Group (TAG) is responsible for long‑term technology pathfinding, device research, and cross‑node innovation including ferroelectric memory development, AI hardware enablement, and quantum computing concepts. We are offering a highly selective internship for students with strong technical curiosity and passion for semiconductor devices, ferroelectrics, and advanced CMOS research.
Your Job
As An Intern In R&D CMOS Integration, You Will Work Closely With The Technology Architect Group On Early‑stage Research And Exploratory Technology Development. Your Work May Include
Ferroelectric HfO₂ Memory (FeFET / FeCAP)
This internship is ideal for students who are passionate about semiconductor physics, microelectronics, embedded systems, AI‑based engineering workflows, and real‑world device development.
Key Details
GlobalFoundries® Inc. (GF®) is one of the world's leading semiconductor manufacturers. GF redefines innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions with leading performance in all growth markets. GF offers a unique mix of design, development and manufacturing services. With a talented and diverse team and manufacturing locations in the U.S., Europe and Asia, GF is a trusted technology provider to its global customers. GF employs approximately 13,000 people, including more than 3,000 in Dresden, Germany.
For more information, visit www.gf.com.
Introduction
GlobalFoundries is a leading full‑service semiconductor manufacturer with advanced fabrication sites across the globe. Our Dresden site (F1) develops and manufactures differentiated CMOS technologies, including 22FDX® – a key enabler for ultra‑low‑power electronics, embedded NVM, and emerging quantum applications. The Technology Architect Group (TAG) is responsible for long‑term technology pathfinding, device research, and cross‑node innovation including ferroelectric memory development, AI hardware enablement, and quantum computing concepts. We are offering a highly selective internship for students with strong technical curiosity and passion for semiconductor devices, ferroelectrics, and advanced CMOS research.
Your Job
As An Intern In R&D CMOS Integration, You Will Work Closely With The Technology Architect Group On Early‑stage Research And Exploratory Technology Development. Your Work May Include
Ferroelectric HfO₂ Memory (FeFET / FeCAP)
- Supporting experimental development of HfO₂‑based ferroelectric memory devices
- Assisting in material‑ and device‑level characterization (polarization loops, retention, endurance behavior)
- Processing and analyzing electrical, thermal, and reliability datasets
- Evaluating integration pathways into 22FDX® FDSOI CMOS flows
- Assisting in development of AI/ML approaches for device variability analysis, defect classification, or predictive modeling
- Training lightweight neural models for semiconductor data (Python‑based workflows)
- Research on AI‑assisted pattern recognition and automated data labeling
- Supporting feasibility assessments of quantum‑relevant device structures in FDSOI
- Reviewing literature on qubit architectures, cryogenic electronics, and ferroelectric quantum materials
- Contributing to simulation or modelling tasks (e.g., MATLAB, Python, C‑based tools)
- Preparing technical documentation, experiment reports, and presentations
- Participating in cross‑functional meetings with Device Engineering, TCAD, Materials Science and Integration teams
This internship is ideal for students who are passionate about semiconductor physics, microelectronics, embedded systems, AI‑based engineering workflows, and real‑world device development.
- Enrollment in Electrical Engineering, Electronics, Semiconductor Devices, Computer Engineering, or similar
- Foundational knowledge in semiconductors, MOSFET physics, microelectronics, digital design and embedded systems
- Strong analytical and problem‑solving skills
- Ability to work independently, manage tasks, and thrive in a research‑focused environment
- Excellent communication skills in English (C1)
- Experience with programming languages such as Python, C, Arduino/ESP32, or parallel programming environments
- Familiarity with tools like MATLAB, YOLO, SCADA/PLC systems, mission‑planning software, AutoCAD, or Raspberry Pi
- Demonstrated hands‑on experience through technical projects, e.g. intensive use and understanding of modern AI tools, demonstration of team-skill in technological project execution, Semiconductor device‑related course projects (e.g., MOSCAP/MOSFET, digital logic, FPGA basics
- The opportunity to become part of an open and dynamic team
- Flexible working hours based on trust
- Access to professional development opportunities
- Competitive compensation
- On-site cafeteria, gym, and physical therapy
- Additional attractive benefits, such as health promotion programs and various employee discounts
Key Details
- Duration: 3 months
- Full‑time university internship (3 months)
Skills & technologies
Ferroelectric MemoryDevice Variability AnalysisPythonHfO₂Neural NetworksDefect ClassificationCMOSFDSOIAI/ML22FDXPredictive Modeling